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Creators/Authors contains: "Rowe, D."

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  1. ; ; ; ; ; ; ; ; ; ; et al ( , Japanese Journal of Applied Physics)
    Abstract We report the growth of α -Ga 2 O 3 on m -plane α -Al 2 O 3 by conventional plasma-assisted molecular-beam epitaxy and In-mediated metal–oxide-catalyzed epitaxy (MOCATAXY). We report a growth rate diagram for α -Ga 2 O 3 ( 10 1 ¯ 0 ), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of α -Ga 2 O 3 . Through the use of In-mediated catalysis, growth rates over 0.2 μ m h −1 and rocking curves with full width at half maxima of Δ ω ≈ 0.45° are achieved. Faceting is observed along the α -Ga 2 O 3 film surface and explored through scanning transmission electron microscopy. 
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  2. ; ; ; ( , Biometrics)
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  3. ; ; ; ; ; ; ; ; ; ; et al ( , Applied Physics Letters)
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  4. ; ; ; ; ; ; ; ; ( , Physical Review Letters)
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  5. ; ; ; ( , Physical Review B)
  6. ; ; ; ( , Physical Review B)